Inhomogeneous charging and screening effects in semiconductor quantum dot arrays

Inhomogeneous boundary effects in semiconductor quantum wires

Abslract Boundary effects play an essential role in determining the physical properties of semiconductor quantum wires. Additional features come into play when one considers inhomogeneous boundaries, i.e. wires whose widths are functions of distance along the length of the wire. We show that, in the adiabatic approximation (which assumes that the boundary patential fluctuation effects, or equiv...

Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array

Semiconductor double quantum dot micromaser.

The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semicondu...

Electron cotunneling in a semiconductor quantum dot.

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributio...

Multiple cotunneling in large quantum dot arrays.

We investigate the effects of inelastic cotunneling on the electronic transport properties of gold nanoparticle multilayers and thick films at low applied bias, inside the Coulomb-blockade regime. We find that the zero-bias conductance, g(0)(T), in all systems exhibits Efros-Shklovskii-type variable range hopping transport. The resulting typical hopping distance, corresponding to the number of ...